IndiumV2, Main, Exploration, bibRecord, 001475

Electrical properties of (Ba, Sr)TiO3 thin films with Pt and ITO electrodes: dielectric and rectifying behaviour.

Identifieur interne : 001475 ( Main/Exploration ); précédent : 001474; suivant : 001476

Electrical properties of (Ba, Sr)TiO3 thin films with Pt and ITO electrodes: dielectric and rectifying behaviour.

Auteurs : RBID : pubmed:21813966

English descriptors

KwdEn :
- Barium Compounds (chemistry), Electric Impedance, Electrochemistry, Electrodes, Materials Testing, Oxidation-Reduction, Oxides (chemistry), Platinum (chemistry), Strontium (chemistry), Tin Compounds (chemistry).
MESH :
- chemical , chemistry : Barium Compounds, Oxides, Platinum, Strontium, Tin Compounds.
- Electric Impedance, Electrochemistry, Electrodes, Materials Testing, Oxidation-Reduction.

Abstract

The electrical properties of (Ba, Sr)TiO(3) (BST) thin films are studied using different combinations of Pt and tin-doped indium oxide (In(2)O(3):Sn, ITO) as electrode material. With Pt as bottom and top electrode the films show insulating behaviour with a low leakage current. A rectifying current-voltage characteristic is obtained by replacing the top electrode with ITO. As shown by photoemission as well as by electrical measurements, the property of the BST/ITO interface depends strongly on the deposition sequence, and can be related to the level of oxidation of the ITO film. Highly doped ITO as top electrode forms an Ohmic contact with BST. This enables the preparation of highly rectifying diodes that exhibit a space-charge-limited current behaviour. Larger barriers are obtained when ITO is used as bottom electrode. This is related to the oxidation of the ITO layer during BST deposition and results in a low interface-limited current. Due to the large energy gaps of both BST and ITO, the combination of these materials provides an additional route to transparent electronics.

DOI: 10.1088/0953-8984/23/33/334202
PubMed: 21813966

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Le document en format XML

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<author><name sortKey="Li, Shunyi" uniqKey="Li S">Shunyi Li</name>
<affiliation wicri:level="3"><nlm:affiliation>Department of Materials and Earth Sciences, Technische Universität Darmstadt, Surface Science Division, Petersenstrasse 32, 64287 Darmstadt, Germany.</nlm:affiliation>
<country xml:lang="fr">Allemagne</country>
<wicri:regionArea>Department of Materials and Earth Sciences, Technische Universität Darmstadt, Surface Science Division, Petersenstrasse 32, 64287 Darmstadt</wicri:regionArea>
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<author><name sortKey="Ghinea, Cosmina" uniqKey="Ghinea C">Cosmina Ghinea</name>
</author>
<author><name sortKey="Bayer, Thorsten J M" uniqKey="Bayer T">Thorsten J M Bayer</name>
</author>
<author><name sortKey="Motzko, Markus" uniqKey="Motzko M">Markus Motzko</name>
</author>
<author><name sortKey="Schafranek, Robert" uniqKey="Schafranek R">Robert Schafranek</name>
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<author><name sortKey="Klein, Andreas" uniqKey="Klein A">Andreas Klein</name>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Barium Compounds (chemistry)</term>
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<term>Electrodes</term>
<term>Materials Testing</term>
<term>Oxidation-Reduction</term>
<term>Oxides (chemistry)</term>
<term>Platinum (chemistry)</term>
<term>Strontium (chemistry)</term>
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<term>Tin Compounds</term>
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<front><div type="abstract" xml:lang="en">The electrical properties of (Ba, Sr)TiO(3) (BST) thin films are studied using different combinations of Pt and tin-doped indium oxide (In(2)O(3):Sn, ITO) as electrode material. With Pt as bottom and top electrode the films show insulating behaviour with a low leakage current. A rectifying current-voltage characteristic is obtained by replacing the top electrode with ITO. As shown by photoemission as well as by electrical measurements, the property of the BST/ITO interface depends strongly on the deposition sequence, and can be related to the level of oxidation of the ITO film. Highly doped ITO as top electrode forms an Ohmic contact with BST. This enables the preparation of highly rectifying diodes that exhibit a space-charge-limited current behaviour. Larger barriers are obtained when ITO is used as bottom electrode. This is related to the oxidation of the ITO layer during BST deposition and results in a low interface-limited current. Due to the large energy gaps of both BST and ITO, the combination of these materials provides an additional route to transparent electronics.</div>
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<Title>Journal of physics. Condensed matter : an Institute of Physics journal</Title>
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<Abstract><AbstractText>The electrical properties of (Ba, Sr)TiO(3) (BST) thin films are studied using different combinations of Pt and tin-doped indium oxide (In(2)O(3):Sn, ITO) as electrode material. With Pt as bottom and top electrode the films show insulating behaviour with a low leakage current. A rectifying current-voltage characteristic is obtained by replacing the top electrode with ITO. As shown by photoemission as well as by electrical measurements, the property of the BST/ITO interface depends strongly on the deposition sequence, and can be related to the level of oxidation of the ITO film. Highly doped ITO as top electrode forms an Ohmic contact with BST. This enables the preparation of highly rectifying diodes that exhibit a space-charge-limited current behaviour. Larger barriers are obtained when ITO is used as bottom electrode. This is related to the oxidation of the ITO layer during BST deposition and results in a low interface-limited current. Due to the large energy gaps of both BST and ITO, the combination of these materials provides an additional route to transparent electronics.</AbstractText>
<CopyrightInformation>© 2011 IOP Publishing Ltd</CopyrightInformation>
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Electrical properties of (Ba, Sr)TiO3 thin films with Pt and ITO electrodes: dielectric and rectifying behaviour.

Electrical properties of (Ba, Sr)TiO3 thin films with Pt and ITO electrodes: dielectric and rectifying behaviour.

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri

Pour générer des pages wiki